CS14N06AQ2-1 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power sw.
. The package form is DFN3×3-8L, which accords with the RoHS
standard.
Features：
l Fast Switching l Low ON Resistance(.
CS14N06 AQ2-1, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a lo.
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